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Product groupModules
DescriptionON Semiconductor MMFT2406T1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:240 V, Number of Elements:1, Drain Current-Max (Abs) (ID):700 mA, Drain Current-Max (ID):700 mA, Drain-source On Resistance-Max:6 Ω
DescriptionON Semiconductor MMFT2406T1 Discrete Semiconductor, MOSFET N-CH 240V 700MA SOT223
DescriptionON Semiconductor MMFT2406T1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:240 V, Number of Elements:1, Drain Current-Max (Abs) (ID):700 mA, Drain Current-Max (ID):700 mA, Drain-source On Resistance-Max:6 Ω
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