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MMDFS2P102R2

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onsemi MMDFS2P102R2

onsemi MMDFS2P102R2 overview

ON Semiconductor MMDFS2P102R2 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numbe...

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Part number or familyMMDFS2P102R2
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMDFS2P102R2 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3.3 A, Drain Current-Max (ID):3.3 A, Drain-source On Resistance-Max:180 mΩ
DescriptionON Semiconductor MMDFS2P102R2 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3.3 A, Drain Current-Max (ID):3.3 A, Drain-source On Resistance-Max:180 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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