onsemi MMDF2P02ER2G overview
MMDF2P02ER2G is a transistor made by onsemi. ON Semiconductor MMDF2P02ER2G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:25 V, Number of Elements:2, Drain Current-Max (Abs)…
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor MMDF2P02ER2G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:25 V, Number of Elements:2, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max (ID):2.5 A, Drain-source On Resistance-Max:250 mΩ
DescriptionON Semiconductor MMDF2P02ER2G Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:25 V, Number of Elements:2, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max (ID):2.5 A, Drain-source On Resistance-Max:250 mΩ
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