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MMDF2N02ER2G

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onsemi MMDF2N02ER2G

onsemi MMDF2N02ER2G overview

ON Semiconductor MMDF2N02ER2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-I...

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Part number or familyMMDF2N02ER2G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MMDF2N02ER2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:25 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.6 A, Drain Current-Max (ID):3.6 A, Drain-source On Resistance-Max:100 mΩ
DescriptionON Semiconductor MMDF2N02ER2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:25 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.6 A, Drain Current-Max (ID):3.6 A, Drain-source On Resistance-Max:100 mΩ

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