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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MLP1N06CLG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR, Number of Terminals:3, DS Breakdown Voltage-Min:59 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2.75 A, Drain-source On Resistance-Max:750 mΩ
DescriptionON Semiconductor MLP1N06CLG Integrated Circuit, MOSFET N-CH 1A 62V TO-220AB
DescriptionON Semiconductor MLP1N06CLG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR, Number of Terminals:3, DS Breakdown Voltage-Min:59 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2.75 A, Drain-source On Resistance-Max:750 mΩ
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