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MLD2N06CLT4G

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onsemi MLD2N06CLT4G

onsemi MLD2N06CLT4G overview

ON Semiconductor MLD2N06CLT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN BIPOLAR TRAN...

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Part number or familyMLD2N06CLT4G
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor MLD2N06CLT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR, Number of Terminals:2, DS Breakdown Voltage-Min:58 V, Number of Elements:1, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:400 mΩ
DescriptionON Semiconductor MLD2N06CLT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR, Number of Terminals:2, DS Breakdown Voltage-Min:58 V, Number of Elements:1, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:400 mΩ

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