onsemi MGSF3442VT1 overview
MGSF3442VT1 is a transistor made by onsemi. ON Semiconductor MGSF3442VT1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain…
Product details
Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor MGSF3442VT1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A, Drain-source On Resistance-Max:70 mΩ
DescriptionON Semiconductor MGSF3442VT1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:6,DS Breakdown Voltage-Min:20 V,Number of Elements:1,Drain Current-Max (Abs) (ID):4 A,Drain Current-Max (ID):4 A,Drain-source On Resistance-Max:70 m?
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