Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor IRLM120ATF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (ID):2.3 A, Drain-source On Resistance-Max:220 mΩ
DescriptionON Semiconductor IRLM120ATF Discrete Semiconductor, MOSFET N-CH 100V 2.3A SOT-223
DescriptionON Semiconductor IRLM120ATF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (ID):2.3 A,Drain-source On Resistance-Max:220 m?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
onsemi
View onsemi profile
Available from
Sourcing support available
Start a sourcing request