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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor IRL640A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:180 mΩ
DescriptionON Semiconductor IRL640A MOSFET, Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 18 A, 180 mΩ, TO-220
DescriptionON Semiconductor IRL640A Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:180 mΩ
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