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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor IRF634B-FP001 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:250 V, Number of Elements:1
DescriptionON Semiconductor IRF634B-FP001 Discrete Semiconductor, MOSFET N-CH 250V 8.1A TO-220
DescriptionON Semiconductor IRF634B-FP001 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:250 V,Number of Elements:1
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onsemi
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