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FQU2N50BTU_WS

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onsemi FQU2N50BTU_WS

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ON Semiconductor FQU2N50BTU_WS Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Numbe...

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Part number or familyFQU2N50BTU_WS
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQU2N50BTU_WS Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1.6 A, Drain Current-Max (ID):1.6 A, Drain-source On Resistance-Max:5.3 Ω
DescriptionON Semiconductor FQU2N50BTU_WS Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):1.6 A,Drain Current-Max (ID):1.6 A,Drain-source On Resistance-Max:5.3 ?

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