onsemi FQU13N06LTU_WS overview
FQU13N06LTU_WS by onsemi is listed under Discrete Semiconductor Products. ON Semiconductor FQU13N06LTU_WS Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain…
Manufactured byonsemi
Part number or familyFQU13N06LTU_WS
Product typeDiscrete Semiconductor Product
Product details
Manufactured byonsemi
Product typeDiscrete Semiconductor Product
DescriptionON Semiconductor FQU13N06LTU_WS Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):11 A, Drain Current-Max (ID):11 A, Drain-source On Resistance-Max:145 mΩ
DescriptionON Semiconductor FQU13N06LTU_WS Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):11 A,Drain Current-Max (ID):11 A,Drain-source On Resistance-Max:145 m?
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Discrete Semiconductor Product
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