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FQT1N60C

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onsemi FQT1N60C

onsemi FQT1N60C overview

ON Semiconductor FQT1N60C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...

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Part number or familyFQT1N60C
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQT1N60C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):200 mA, Drain-source On Resistance-Max:11.5 Ω
DescriptionON Semiconductor FQT1N60C MOSFET, Power MOSFET, N-Channel, QFET, 600 V, 0.2 A, 11.5 Ω, SOT-223
DescriptionON Semiconductor FQT1N60C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (ID):200 mA,Drain-source On Resistance-Max:11.5 ?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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