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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQPF3N25 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2.3 A, Drain Current-Max (ID):2.3 A, Drain-source On Resistance-Max:2.2 Ω
DescriptionON Semiconductor FQPF3N25 MOSFET, Power MOSFET, N-Channel, QFET, 250 V, 2.3 A, 2.2 Ω, TO-220F
DescriptionON Semiconductor FQPF3N25 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:250 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2.3 A,Drain Current-Max (ID):2.3 A,Drain-source On Resistance-Max:2.2 ?
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