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FQPF2N70

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onsemi FQPF2N70

onsemi FQPF2N70 overview

ON Semiconductor FQPF2N70 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of ...

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Part number or familyFQPF2N70
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQPF2N70 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:700 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:6.3 Ω
DescriptionON Semiconductor FQPF2N70 MOSFET, Power MOSFET, N-Channel, QFET, 700 V, 2.0 A, 6.3 Ω, TO-220F
DescriptionON Semiconductor FQPF2N70 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:700 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:6.3 Ω

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