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FQPF22N30

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onsemi FQPF22N30

onsemi FQPF22N30 overview

ON Semiconductor FQPF22N30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...

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Part number or familyFQPF22N30
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQPF22N30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:300 V, Number of Elements:1, Drain Current-Max (Abs) (ID):12 A, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:160 mΩ
DescriptionON Semiconductor FQPF22N30 MOSFET, N-Channel QFET MOSFET 300V, 12A, 160mΩ
DescriptionON Semiconductor FQPF22N30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:300 V, Number of Elements:1, Drain Current-Max (Abs) (ID):12 A, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:160 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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