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FQPF19N20C

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onsemi FQPF19N20C

onsemi FQPF19N20C overview

ON Semiconductor FQPF19N20C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

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Part number or familyFQPF19N20C
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQPF19N20C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):19 A, Drain Current-Max (ID):19 A, Drain-source On Resistance-Max:170 mΩ
DescriptionON Semiconductor FQPF19N20C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):19 A, Drain Current-Max (ID):19 A, Drain-source On Resistance-Max:170 mΩ

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