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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQP4P40 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:400 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3.5 A, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:3.1 Ω
DescriptionON Semiconductor FQP4P40 MOSFET, Power MOSFET, P-Channel, QFET, -400 V, -3.5 A, 3.1 Ω, TO-220
DescriptionON Semiconductor FQP4P40 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:400 V, Number of Elements:1, Drain Current-Max (Abs) (ID):3.5 A, Drain Current-Max (ID):3.5 A, Drain-source On Resistance-Max:3.1 Ω
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