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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQP22N30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:300 V, Number of Elements:1, Drain Current-Max (Abs) (ID):21 A, Drain Current-Max (ID):21 A, Drain-source On Resistance-Max:160 mΩ
DescriptionON Semiconductor FQP22N30 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:300 V, Number of Elements:1, Drain Current-Max (Abs) (ID):21 A, Drain Current-Max (ID):21 A, Drain-source On Resistance-Max:160 mΩ
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