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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQP12P10 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):11.5 A, Drain Current-Max (ID):11.5 A, Drain-source On Resistance-Max:290 mΩ
DescriptionON Semiconductor FQP12P10 MOSFET, Power MOSFET, P-Channel, QFET, -100 V, -11.5 A, 290 mΩ, TO-220
DescriptionON Semiconductor FQP12P10 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):11.5 A,Drain Current-Max (ID):11.5 A,Drain-source On Resistance-Max:290 m?
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onsemi
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