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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQP10N20C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (Abs) (ID):9.5 A, Drain Current-Max (ID):9.5 A, Drain-source On Resistance-Max:360 mΩ
DescriptionON Semiconductor FQP10N20C MOSFET, Power MOSFET, N-Channel, QFET, 200 V, 9.5 A, 360 mΩ, TO-220
DescriptionON Semiconductor FQP10N20C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (Abs) (ID):9.5 A,Drain Current-Max (ID):9.5 A,Drain-source On Resistance-Max:360 m?
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