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FQD9N25TM_F080

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onsemi FQD9N25TM_F080

onsemi FQD9N25TM_F080 overview

ON Semiconductor FQD9N25TM_F080 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Num...

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Part number or familyFQD9N25TM_F080
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQD9N25TM_F080 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:250 V, Number of Elements:1, Drain Current-Max (Abs) (ID):7.4 A, Drain Current-Max (ID):7.4 A, Drain-source On Resistance-Max:420 mΩ
DescriptionON Semiconductor FQD9N25TM_F080 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:250 V,Number of Elements:1,Drain Current-Max (Abs) (ID):7.4 A,Drain Current-Max (ID):7.4 A,Drain-source On Resistance-Max:420 m?

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