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FQD8P10TM_F085

onsemi · Modules

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onsemi FQD8P10TM_F085

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ON Semiconductor FQD8P10TM_F085 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Num...

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Part number or familyFQD8P10TM_F085
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQD8P10TM_F085 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):6.6 A, Drain Current-Max (ID):6.6 A, Drain-source On Resistance-Max:530 mΩ
DescriptionON Semiconductor FQD8P10TM_F085 MOSFET, -100V, -6.6A, 530mΩ, DPAK P-Channel QFET®
DescriptionON Semiconductor FQD8P10TM_F085 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:100 V,Number of Elements:1,Drain Current-Max (Abs) (ID):6.6 A,Drain Current-Max (ID):6.6 A,Drain-source On Resistance-Max:530 m?

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