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Product groupModules
DescriptionON Semiconductor FQD3N60CTM-WS Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2.4 A, Drain Current-Max (ID):2.4 A, Drain-source On Resistance-Max:3.4 Ω
DescriptionON Semiconductor FQD3N60CTM-WS MOSFET, Power MOSFET, N-Channel, QFET, 600 V, 2.4 A, 3.4 Ω, DPAK
DescriptionON Semiconductor FQD3N60CTM-WS Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):2.4 A,Drain Current-Max (ID):2.4 A,Drain-source On Resistance-Max:3.4 ?
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