onsemi FQD18N20V2 overview
ON Semiconductor FQD18N20V2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number ...
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Manufactured byonsemi
Product typeTransistor
DescriptionON Semiconductor FQD18N20V2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):15 A, Drain-source On Resistance-Max:140 mΩ
DescriptionON Semiconductor FQD18N20V2 MOSFET, Power MOSFET, N-Channel, QFET, 200 V, 15 A, 140 mΩ, DPAK
DescriptionON Semiconductor FQD18N20V2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (ID):15 A,Drain-source On Resistance-Max:140 m?
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