onsemi FQB47P06TM_AM002 overview
ON Semiconductor FQB47P06TM_AM002 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, N...
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Part number or familyFQB47P06TM_AM002
Product typeDiscrete Semiconductor Product
Product details
Manufactured byonsemi
Product typeDiscrete Semiconductor Product
DescriptionON Semiconductor FQB47P06TM_AM002 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):47 A, Drain Current-Max (ID):47 A, Drain-source On Resistance-Max:26 mΩ
DescriptionON Semiconductor FQB47P06TM_AM002 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (Abs) (ID):47 A,Drain Current-Max (ID):47 A,Drain-source On Resistance-Max:26 m?
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Discrete Semiconductor Product
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