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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQB25N33TM_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:330 V, Number of Elements:1
DescriptionON Semiconductor FQB25N33TM_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:330 V,Number of Elements:1
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