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FQB19N20C

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onsemi FQB19N20C

onsemi FQB19N20C overview

ON Semiconductor FQB19N20C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

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Part number or familyFQB19N20C
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQB19N20C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):19 A, Drain-source On Resistance-Max:170 mΩ
DescriptionON Semiconductor FQB19N20C MOSFET, Power MOSFET, N-Channel, QFET, 200 V, 19 A, 170 mΩ, D2PAK
DescriptionON Semiconductor FQB19N20C Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):19 A, Drain-source On Resistance-Max:170 mΩ

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