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FQA7N80C_F109

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onsemi FQA7N80C_F109

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ON Semiconductor FQA7N80C_F109 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Numbe...

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Part number or familyFQA7N80C_F109
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQA7N80C_F109 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:800 V, Number of Elements:1, Drain Current-Max (Abs) (ID):7 A, Drain Current-Max (ID):7 A, Drain-source On Resistance-Max:1.9 Ω
DescriptionON Semiconductor FQA7N80C_F109 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (Abs) (ID):7 A,Drain Current-Max (ID):7 A,Drain-source On Resistance-Max:1.9 ?

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Product group Modules Explore Modules Explore Discrete Semiconductor Products Explore Transistor
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