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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FQA70N15 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:150 V, Number of Elements:1, Drain Current-Max (Abs) (ID):70 A, Drain Current-Max (ID):70 A, Drain-source On Resistance-Max:28 mΩ
DescriptionON Semiconductor FQA70N15 MOSFET, Power MOSFET, N-Channel, QFET, 150V, 70A, 28mΩ, TO-3P
DescriptionON Semiconductor FQA70N15 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:150 V, Number of Elements:1, Drain Current-Max (Abs) (ID):70 A, Drain Current-Max (ID):70 A, Drain-source On Resistance-Max:28 mΩ
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