Product details
Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDSS2407 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:8, DS Breakdown Voltage-Min:62 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3 A, Drain Current-Max (ID):3.3 A, Drain-source On Resistance-Max:110 mΩ
DescriptionON Semiconductor FDSS2407 MOSFET, N-Channel Logic Level Gate Dual MOSFET 60V, 3.3A, 132mΩ
DescriptionON Semiconductor FDSS2407 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR, Number of Terminals:8, DS Breakdown Voltage-Min:62 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3 A, Drain Current-Max (ID):3.3 A, Drain-source On Resistance-Max:110 mΩ
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onsemi
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