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FDS8984_F085

onsemi · Modules

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onsemi FDS8984_F085

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ON Semiconductor FDS8984_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-I...

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Part number or familyFDS8984_F085
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDS8984_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):7 A, Drain Current-Max (ID):7 A, Drain-source On Resistance-Max:23 mΩ
DescriptionON Semiconductor FDS8984_F085 MOSFET, N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ
DescriptionON Semiconductor FDS8984_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:2,Drain Current-Max (Abs) (ID):7 A,Drain Current-Max (ID):7 A,Drain-source On Resistance-Max:23 m?

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