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FDS8870

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onsemi FDS8870

onsemi FDS8870 overview

ON Semiconductor FDS8870 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of ...

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Part number or familyFDS8870
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDS8870 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):17 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:4.2 mΩ
DescriptionON Semiconductor FDS8870 MOSFET, N-Channel PowerTrench MOSFET 30V, 18A, 4.2mΩ
DescriptionON Semiconductor FDS8870 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):17 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:4.2 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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