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FDS4559_F085

onsemi · Modules

onsemi FDS4559_F085

onsemi FDS4559_F085 overview

ON Semiconductor FDS4559_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-I...

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDS4559_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:60 V, Number of Elements:2, Drain Current-Max (Abs) (ID):4.5 A, Drain Current-Max (ID):4.5 A, Drain-source On Resistance-Max:55 mΩ
DescriptionON Semiconductor FDS4559_F085 MOSFET, 60V Complementary PowerTrench MOSFET
DescriptionON Semiconductor FDS4559_F085 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:60 V, Number of Elements:2, Drain Current-Max (Abs) (ID):4.5 A, Drain Current-Max (ID):4.5 A, Drain-source On Resistance-Max:55 mΩ

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