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FDPF18N50T

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onsemi FDPF18N50T

onsemi FDPF18N50T overview

ON Semiconductor FDPF18N50T Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

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Part number or familyFDPF18N50T
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDPF18N50T Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:265 mΩ
DescriptionON Semiconductor FDPF18N50T MOSFET, Power MOSFET, N-Channel, UniFET, 500 V, 18 A, 265 mΩ, TO-220F
DescriptionON Semiconductor FDPF18N50T Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):18 A, Drain Current-Max (ID):18 A, Drain-source On Resistance-Max:265 mΩ

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