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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDPF10N50UT Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:1.05 Ω
DescriptionON Semiconductor FDPF10N50UT MOSFET, Power MOSFET, N-Channel, UniFET, Ultra FRFET, 500 V, 8 A, 1.05 Ω, TO-220F
DescriptionON Semiconductor FDPF10N50UT Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):8 A,Drain Current-Max (ID):8 A,Drain-source On Resistance-Max:1.05 ?
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