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FDP8870

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onsemi FDP8870

onsemi FDP8870 overview

ON Semiconductor FDP8870 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of T...

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Part number or familyFDP8870
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDP8870 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):19 A, Drain Current-Max (ID):19 A, Drain-source On Resistance-Max:4.6 mΩ
DescriptionON Semiconductor FDP8870 MOSFET, N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ
DescriptionON Semiconductor FDP8870 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (Abs) (ID):19 A, Drain Current-Max (ID):19 A, Drain-source On Resistance-Max:4.6 mΩ

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