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FDP054N10

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onsemi FDP054N10

onsemi FDP054N10 overview

ON Semiconductor FDP054N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of...

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Part number or familyFDP054N10
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDP054N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):144 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:5.5 mΩ
DescriptionON Semiconductor FDP054N10 MOSFET, N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ
DescriptionON Semiconductor FDP054N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):144 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:5.5 mΩ

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