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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDP047N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):164 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:4.7 mΩ
DescriptionON Semiconductor FDP047N10 MOSFET, Power MOSFET, N-Channel, QFET, 100 V, 164 A, 4.7 mΩ, TO-220
DescriptionON Semiconductor FDP047N10 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):164 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:4.7 mΩ
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