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FDP045N10A_F102

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onsemi FDP045N10A_F102

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ON Semiconductor FDP045N10A_F102 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Num...

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Part number or familyFDP045N10A_F102
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDP045N10A_F102 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):120 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:4.5 mΩ
DescriptionON Semiconductor FDP045N10A_F102 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):120 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:4.5 mΩ

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