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FDP030N06B_F102

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onsemi FDP030N06B_F102

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ON Semiconductor FDP030N06B_F102 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Num...

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Part number or familyFDP030N06B_F102
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDP030N06B_F102 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):120 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:3.1 mΩ
DescriptionON Semiconductor FDP030N06B_F102 MOSFET, N-Channel PowerTrench MOSFET 60V, 195A, 3.1mΩ
DescriptionON Semiconductor FDP030N06B_F102 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (Abs) (ID):120 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:3.1 mΩ

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