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DescriptionON Semiconductor FDMS86200DC Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:150 V, Number of Elements:1, Drain Current-Max (Abs) (ID):28 A, Drain Current-Max (ID):9.3 A, Drain-source On Resistance-Max:17 mΩ
DescriptionON Semiconductor FDMS86200DC MOSFET, N-Channel Dual Cool 56 Shielded Gate PowerTrench MOSFET 150V, 40A, 17mΩ
DescriptionON Semiconductor FDMS86200DC Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:150 V, Number of Elements:1, Drain Current-Max (Abs) (ID):28 A, Drain Current-Max (ID):9.3 A, Drain-source On Resistance-Max:17 mΩ
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