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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDMS7602S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):80 A, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:5 mΩ
DescriptionON Semiconductor FDMS7602S MOSFET, Dual N-Channel PowerTrench MOSFET 30V, 30A
DescriptionON Semiconductor FDMS7602S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):80 A, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:5 mΩ
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