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FDMS7572S

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onsemi FDMS7572S

onsemi FDMS7572S overview

ON Semiconductor FDMS7572S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number o...

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Part number or familyFDMS7572S
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDMS7572S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max (Abs) (ID):105 A, Drain Current-Max (ID):23 A, Drain-source On Resistance-Max:2.9 mΩ
DescriptionON Semiconductor FDMS7572S MOSFET, N-Channel PowerTrench SyncFET 25V, 49A, 2.9mΩ
DescriptionON Semiconductor FDMS7572S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max (Abs) (ID):105 A, Drain Current-Max (ID):23 A, Drain-source On Resistance-Max:2.9 mΩ

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