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FDMS3602S

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onsemi FDMS3602S

onsemi FDMS3602S overview

ON Semiconductor FDMS3602S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES, 2 ELEMENTS WITH BUILT-IN DIO...

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Part number or familyFDMS3602S
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDMS3602S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:25 V, Number of Elements:2, Drain Current-Max (Abs) (ID):135 A, Drain Current-Max (ID):15 A, Drain-source On Resistance-Max:5.6 mΩ
DescriptionON Semiconductor FDMS3602S Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:25 V, Number of Elements:2, Drain Current-Max (Abs) (ID):135 A, Drain Current-Max (ID):15 A, Drain-source On Resistance-Max:5.6 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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