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Product groupModules
DescriptionON Semiconductor FDMS001N025DSD Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:25 V, Number of Elements:2, Drain Current-Max (ID):19 A, Drain-source On Resistance-Max:3.25 mΩ
DescriptionON Semiconductor FDMS001N025DSD MOSFET, 25 V Asymmetric Dual N−Channel PowerTrench Power Clip MOSFET
DescriptionON Semiconductor FDMS001N025DSD Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:25 V, Number of Elements:2, Drain Current-Max (ID):19 A, Drain-source On Resistance-Max:3.25 mΩ
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