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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDMQ86530L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMPLEX, Number of Terminals:12, DS Breakdown Voltage-Min:60 V, Number of Elements:4, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:17.5 mΩ
DescriptionON Semiconductor FDMQ86530L Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMPLEX, Number of Terminals:12, DS Breakdown Voltage-Min:60 V, Number of Elements:4, Drain Current-Max (Abs) (ID):8 A, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:17.5 mΩ
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