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DescriptionON Semiconductor FDMQ8403 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:12, DS Breakdown Voltage-Min:100 V, Number of Elements:2, Drain Current-Max (Abs) (ID):6 A, Drain Current-Max (ID):3.1 A, Drain-source On Resistance-Max:110 mΩ
DescriptionON Semiconductor FDMQ8403 MOSFET, N-Channel PowerTrench MOSFET GreenBridge Series of High-Efficiency Bridge Rectifiers 100V, 6A, 110mΩ
DescriptionON Semiconductor FDMQ8403 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:12, DS Breakdown Voltage-Min:100 V, Number of Elements:2, Drain Current-Max (Abs) (ID):6 A, Drain Current-Max (ID):3.1 A, Drain-source On Resistance-Max:110 mΩ
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