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FDMD84100

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onsemi FDMD84100

onsemi FDMD84100 overview

ON Semiconductor FDMD84100 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS WITH BUILT...

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Part number or familyFDMD84100
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDMD84100 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:100 V, Number of Elements:2, Drain Current-Max (Abs) (ID):21 A, Drain Current-Max (ID):7 A, Drain-source On Resistance-Max:20 mΩ
DescriptionON Semiconductor FDMD84100 MOSFET, Dual N-Channel PowerTrench MOSFET 100V, 21A, 20mΩ
DescriptionON Semiconductor FDMD84100 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:100 V, Number of Elements:2, Drain Current-Max (Abs) (ID):21 A, Drain Current-Max (ID):7 A, Drain-source On Resistance-Max:20 mΩ

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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