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FDMC86265P

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onsemi FDMC86265P

onsemi FDMC86265P overview

ON Semiconductor FDMC86265P Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number ...

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Part number or familyFDMC86265P
Product groupModules

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Manufactured byonsemi
Product groupModules
DescriptionON Semiconductor FDMC86265P Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:150 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1.8 A, Drain Current-Max (ID):1 A, Drain-source On Resistance-Max:1.2 Ω
DescriptionON Semiconductor FDMC86265P MOSFET, P-Channel PowerTrench MOSFET -150V, -2.6A, 1.2Ω
DescriptionON Semiconductor FDMC86265P Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:150 V, Number of Elements:1, Drain Current-Max (Abs) (ID):1.8 A, Drain Current-Max (ID):1 A, Drain-source On Resistance-Max:1.2 Ω

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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